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| LT2A01-LT2A07 Vishay Lite-On Power Semiconductor 2.0A Rectifier Features D Diffused junction D High current capability and low forward voltage drop D Surge overload rating to 70A peak D Plastic material - UL Recognition flammability classification 94V-0 14 421 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC Bl ki voltage DC Blocking lt Test Conditions Type LT2A01 LT2A02 LT2A03 LT2A04 LT2A05 LT2A06 LT2A07 Symbol VRRM =VRWM =VR V Value 50 100 200 400 600 800 1000 70 2 -65...+150 Unit V V V V V V V A A C Peak forward surge current Average forward current TA=55C Junction and storage temperature range IFSM IFAV Tj=Tstg Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current I2t Rating for fusing Diode capacitance Thermal resistance junction to ambient Test Conditions IF=2A TA=25C TA=100C VR=4V, f=1MHz Type Symbol VF IR IR I2t CD RthJA Min Typ Max 1.1 5 50 17.5 Unit V mA mA A2s pF K/W 15 60 Rev. A2, 24-Jun-98 1 (4) LT2A01-LT2A07 Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified) IFSM - Peak Forward Surge Current ( A ) IFAV - Average Forward Current ( A ) 2.5 2.0 75 60 45 1.5 1.0 30 0.5 0 Single phase half-wave 60 Hz resistive or inductive load Load 9.5mm Lead Length 15 8.3 ms Single Half-Sine-Wave JEDEC method 0 1 10 Number of Cycles at 60 Hz 100 25 15579 50 75 100 125 150 175 200 15581 Tamb - Ambient Temperature ( C ) Figure 1. Max. Average Forward Current vs. Ambient Temperature 10 Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 100 Tj = 25C C D - Diode Capacitance ( pF ) IF - Forward Current ( A ) f = 1 MHz 1.0 10 0.1 0.01 0 15580 Tj = 25C IF Pulse Width = 300 s 0.8 1.6 0.4 1.2 VF - Forward Voltage ( V ) 1.0 1.0 15582 10 VR - Reverse Voltage ( V ) 100 Figure 2. Typ. Forward Current vs. Forward Voltage Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 2 (4) Rev. A2, 24-Jun-98 LT2A01-LT2A07 Vishay Lite-On Power Semiconductor Dimensions in mm 14442 Case: molded plastic Polarity: cathode band Approx. weight: 0.4 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) LT2A01-LT2A07 Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98 |
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